NEUTRON-ACTIVATION ANALYSIS OF IRON AND COPPER AT 10(13)-10(14)-ATOMS-CENTER-DOT-M(-2) ON SILICON-WAFER SURFACE

Authors
SHIGEMATSU T POLASEK M YONEZAWA H KATOH M
Citation
T. Shigematsu et al., NEUTRON-ACTIVATION ANALYSIS OF IRON AND COPPER AT 10(13)-10(14)-ATOMS-CENTER-DOT-M(-2) ON SILICON-WAFER SURFACE, Journal of radioanalytical and nuclear chemistry, 216(2), 1997, pp. 237-240
Citations number
9
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Analytical","Nuclear Sciences & Tecnology
Journal title
Journal of radioanalytical and nuclear chemistry → ACNP
ISSN journal
02365731
Volume
216
Issue
2
Year of publication
1997
Pages
237 - 240
Database
ISI
SICI code
0236-5731(1997)216:2<237:NAOIAC>2.0.ZU;2-N
Abstract
The surface concentrations of copper and iron in currently used silico n wafers are lower than 10(14) atoms . m(-2). To determine such ultra- trace elements accurately by neutron activation analysis, we measured the efficiencies of a well-type Ge detector for Fe-59 gamma-rays and C u-64 annihilation gamma-rays. We also developed methods for preparing samples for copper and iron analysis including a low-temperature silic on direct-bonding technique. We have applied these techniques to deter mine copper and iron on the surface of clean silicon wafers, and obtai ned concentrations of 10(13)-10(14) atoms . m(-2).