INVESTIGATION OF ROUGHNESS AND DEFECT NUCLEATION ANISOTROPIES ON TENSILE INXCA1-XAS INP(001)/

Authors
DIEGUEZ A CLARK SA CORNET A MORANTE JR
Citation
A. Dieguez et al., INVESTIGATION OF ROUGHNESS AND DEFECT NUCLEATION ANISOTROPIES ON TENSILE INXCA1-XAS INP(001)/, Materials letters, 32(2-3), 1997, pp. 103-107
Citations number
14
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
32
Issue
2-3
Year of publication
1997
Pages
103 - 107
Database
ISI
SICI code
0167-577X(1997)32:2-3<103:IORADN>2.0.ZU;2-P
Abstract
The relaxation mechanism of the tensile InxGa1-xAs/InP(001) system is presented by means of transmission electron and atomic force microscop ies. It is shown that relaxation occurs through a transition from bi- to tri-dimensional growth and defect nucleation. Such non-planar growt h evolves to a faceted surface aligned on [1 (1) over bar 0], which pr omotes the anisotropy on the appearance of defects.