ENHANCEMENT OF THE HFCVD DIAMOND GROWTH-PROCESS BY DIRECTED GAS-FLOW

Authors
YU J HUANG RF WEN LS SHI CX
Citation
J. Yu et al., ENHANCEMENT OF THE HFCVD DIAMOND GROWTH-PROCESS BY DIRECTED GAS-FLOW, Materials letters, 32(2-3), 1997, pp. 143-146
Citations number
8
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
32
Issue
2-3
Year of publication
1997
Pages
143 - 146
Database
ISI
SICI code
0167-577X(1997)32:2-3<143:EOTHDG>2.0.ZU;2-F
Abstract
The effect of gas flow rate on the growth rate of hot-filament CVD dia mond is reported. With increasing gas flow rate, the growth rate of th e HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing throug h the filamentary heater region and to increase the quantity of reacti ve gas mixture reaching the substrate surface per unit time. Eventuall y the growth rate of 8.67 mu m/h was obtained at the gas flow rate of 800 sccm.