ALUMINUM-FREE STRAINED-LAYER LASERS EMITTING AT 1.14 MU-M ON LOW-COMPOSITION INGAAS-N SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
JONES AM LENT B KLUENDER JF ROH SD MOORE AH BONNER WA COLEMAN JJ
Citation
Am. Jones et al., ALUMINUM-FREE STRAINED-LAYER LASERS EMITTING AT 1.14 MU-M ON LOW-COMPOSITION INGAAS-N SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE photonics technology letters, 9(10), 1997, pp. 1319-1321
Citations number
17
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
10
Year of publication
1997
Pages
1319 - 1321
Database
ISI
SICI code
1041-1135(1997)9:10<1319:ASLEA1>2.0.ZU;2-5
Abstract
Broad-area (W = 150 mu m) single-quantum-well (SQW) lasers have been s uccessfully fabricated on n-type In0.03Ga0.97As substrates without inc orporating aluminum-containing alloys. The strained-layer InGaP-GaAs-I nGaAs heterostructure was grown by atmospheric pressure metalorganic c hemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-s trained GaAs optical guiding layers, a peak emission wavelength of 1.1 403 mu m is obtained for a 1-mm cavity length.