THE EFFECTS OF OXYGEN-CONTENT IN TI SI LAYER SYSTEMS ON MCS+ SIMS ANALYSIS/

In secondary ion mass spectrometry (SIMS), profiling with a Cs+ primar y beam and detection of the ejected species MCs+ are currently used in quantitative analysis to minimize matrix effects. On the other hand, the use of oxygen leakage in conventional SIMS analysis is also known to be helpful in quantitative analysis as it also reduces the matrix e ffects on the sputtering yields. Making use of the Cs+-SIMS technique, depth profiling of Ti/Si layers with varying oxygen content shows tha t mass interferences of the detected molecule CsSi+ with CsTi3O+ and C sCO+ occur and lead to quantification errors. (C) 1997 Elsevier Scienc e B.V.