CHARGE MULTIPLICATION IN EPITAXIAL SILICON FISSION-FRAGMENT DETECTORS

Experimental data on charge multiplication in the response of silicon epitaxial detectors to Cf-252-spontaneous-fission fragments are presen ted, Fission-fragment energy distributions measured for various bias v oltages applied to the detector (from 6 to 42 V) are obtained. Transfo rmation of normal-and multiplied-pulse distributions with a rise in th e bias voltage is analyzed. The obtained data show the usefulness of a model based on the mechanism of collision ionization in a strong elec tric field resulting from the accumulation of mobile charge carriers c lose to the input detector electrode.