LONG-WAVELENGTH RECEIVER OPTOELECTRONIC INTEGRATED-CIRCUIT ON 3-INCH-DIAMETER GAAS SUBSTRATE GROWN BY INP-ON-GAAS HETEROEPITAXY

A monolithic long-wavelength receiver optoelectronic integrated circui t (OEIC), which integrates an InGaAs PIN-photodiode (PD) and a GaAs fi eld-eff ect transistor (FET), has been successfully fabricated on a 3- inch-diameter GaAs substrate using InP-on-GaAs heteroepitaxy, by metal organic chemical vapor deposition (MOCVD) and conventional GaAs-IC pro cess technology. The epitaxial quality of the PD layer has been improv ed by use of a low-temperature-grown buffer layer, thermal cyclic anne aling and an InGaAs/InP strained-layer superlattice. The integrated PD has low dark current of 10 nA at -5 V bias voltage, and exhibited sta ble operation at 175-degrees-C. The fabricated receiver OEIC has 1.4 G Hz bandwidth and sensitivity of -28.1 dBm at the transmission rate of 622 Mb/s with bit error rate of 10(-9), which is applicable to practic al subscriber optical communication systems.