ENHANCED PLANAR HALL VOLTAGE CHANGES MEASURED IN CO CU MULTILAYERS AND CO FILMS WITH SQUARE SHAPES/

Enhanced planar Hall voltage changes were measured for a cross-diagona l current-voltage configuration in [Co (1.2 nm)/Cu (0.7 nm)](30) multi layers deposited on square 1 cm(2) Si(100) substrates by magnetron spu ttering. A (Delta V/V-peak) = 4000% voltage maximum change is observed with an I-ext = 1 mA current flow along one diagonal of the square an d the voltage output measured along the other diagonal, for external m agnetic fields H-ext of +/- 30 Oe applied in the film plane perpendicu lar to the edges. This result is discussed in terms of known galvanoma gnetic effects in ferromagnetic thin films used in sensors.