K. Maiti et al., DOPING DEPENDENCE OF TRANSPORT AND MAGNETIC-PROPERTIES IN LA1-XCAXVO3, Journal of physics. Condensed matter, 9(35), 1997, pp. 7507-7514
We report temperature dependences of transport and magnetic properties
of La1-xCaxVO3 controlled by charge carrier doping (x = 0.0-0.5). The
system exhibits an insulator-to-metal transition concomitant with an
antiferromagnetic-to-paramagnetic transition near x = 0.2 with increas
ing substitution. Disorder effects are found to influence the low-temp
erature transport properties of both insulating and metallic compositi
ons near the critical concentration. At higher temperature resistivity
of the metallic compositions has a T-2 dependence close to the critic
al concentration (x = 0.2 and 0.3) and thus provides an example of dis
ordered Fermi liquid behaviour near the Mott transition. In contrast,
at larger doping (x = 0.4 and 0.5) the resistivity exhibits a T-1.5 de
pendence. The molar susceptibility for the metallic samples indicates
substantial enhancements due to electron correlation.