DOPING DEPENDENCE OF TRANSPORT AND MAGNETIC-PROPERTIES IN LA1-XCAXVO3

Citation
K. Maiti et al., DOPING DEPENDENCE OF TRANSPORT AND MAGNETIC-PROPERTIES IN LA1-XCAXVO3, Journal of physics. Condensed matter, 9(35), 1997, pp. 7507-7514
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
35
Year of publication
1997
Pages
7507 - 7514
Database
ISI
SICI code
0953-8984(1997)9:35<7507:DDOTAM>2.0.ZU;2-8
Abstract
We report temperature dependences of transport and magnetic properties of La1-xCaxVO3 controlled by charge carrier doping (x = 0.0-0.5). The system exhibits an insulator-to-metal transition concomitant with an antiferromagnetic-to-paramagnetic transition near x = 0.2 with increas ing substitution. Disorder effects are found to influence the low-temp erature transport properties of both insulating and metallic compositi ons near the critical concentration. At higher temperature resistivity of the metallic compositions has a T-2 dependence close to the critic al concentration (x = 0.2 and 0.3) and thus provides an example of dis ordered Fermi liquid behaviour near the Mott transition. In contrast, at larger doping (x = 0.4 and 0.5) the resistivity exhibits a T-1.5 de pendence. The molar susceptibility for the metallic samples indicates substantial enhancements due to electron correlation.