Ferromagnetic resonance experiments were used to investigate the depen
dence of surface magnetic properties on the film thickness, Hf concent
ration, and annealing conditions for amorphous Co1-xHfx thin films dep
osited on silicon substrate by DC magnetron sputtering method. The fil
m thickness was varying between 1300 and 3000 Angstrom, and Hf concent
ration was 16, 24, or 32 at.%. Annealing was carried out for various t
imes at 150 degrees C and for various temperatures for one hour in the
atmosphere. Measurements were carried out with the static magnetic fi
eld perpendicular and parallel to the thin film plane at room temperat
ure. When the static magnetic held was parallel to the film plane, onl
y one peak(except for Co68Hf32) was observed in all films. However, wh
en the static field was perpendicular to the film plane, subsidiary pe
aks were observed in all films. These subsidiary peaks seperated into
the volume standing spin-wave mode and the surface mode formed in the
film surface by annealing at a low temperature (150 degrees C). The an
nealing result shows that the surface mode can be explained by the str
atification of Co concentration in the film and also suggests that the
Co concentration changed with annealing time and temperature. We have
quantitatively investigated the variations of the effective magnetiza
tions in each layer for various annealing conditions by analyzing the
surface mode with the dispersion relation of the uniform mode. Also, v
olume standing spin-wave modes were analyzed in the surface pinning ap
proximation.