CHARACTERIZATION OF A BISMUTH-DOPED LEAD-ZIRCONATE-TITANATE THIN-FILMCAPACITOR

We have studied the effect of bismuth modification on lead zirconate t itanate thin film. (Pb1-3/2xBix)(Zr0.52Ti0.48)O-3 (PBZT) thin films wi th various Bi contents were successfully prepared by means of the sol- gel method. The substitution of Bi3+ for Pb2+ was determined to be cor rect through the measurement of Fourier Transform Infrared absorption. Ferroelectricity was confirmed by the measurement of the dielectric c onstant and of the P-E hysteresis loop and was found for x less than o r equal to 0.25 for the specimens. The values of both the dielectric c onstant and the remnant polarization decreased as the Bi content incre ased. These tendencies correspond with structural changes, such as dec reasing crystallite size, and the non-ferroelectric cubic phase were a ttributed to negatively-charged vacancies in Pb-sites created by subst itution of Bi for Pb.