LIGHT-EMITTING-DIODES USING QUINQUETHIOPHENE LANGMUIR-BLODGETT-FILMS - EFFECT OF ELECTRON-TRANSPORTING LAYERS

Citation
Aj. Pal et al., LIGHT-EMITTING-DIODES USING QUINQUETHIOPHENE LANGMUIR-BLODGETT-FILMS - EFFECT OF ELECTRON-TRANSPORTING LAYERS, Thin solid films, 285, 1996, pp. 489-491
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
285
Year of publication
1996
Pages
489 - 491
Database
ISI
SICI code
0040-6090(1996)285:<489:LUQL->2.0.ZU;2-K
Abstract
Langmuir-Blodgett (LB) films of quinquethiophene have been used as act ive emitting layers to fabricate light-emitting diodes. Green electrol uminescence was visible in a dark room. The effect of the thickness of the film on the electroluminescence efficiency has been investigated. Even 5 LB layers have been shown to yield the same luminance as thick er films. Additional LB films of electron- transporting material have been used to increase the quantum efficiency, which has also resulted in a lower ''turn-on'' current for the device. The electroluminescence spectrum showed a profile identical to the photoluminescence spectrum of quinquethiophene.