An experimental study has been performed to identify the dominant plas
ma species which contribute to the formation of TIN films during CVD p
lasma deposition. To this effect, we measured the TIN film growth rate
as a function of selected process variables and determined as well th
e radiation emission intensity of the major plasma species and their s
caling with respect to the same variables, in the bulk plasma region a
nd in the vicinity of the substrate. On these bases we calculated the
corresponding flux rates to the substrate surface for the most abundan
t neutral species containing titanium and nitrogen, as well as their s
caling as a function of the selected process variables. The results ob
tained suggest that Ti atoms and N-2(A(3) Sigma(u)(+)) metastables are
the major species contributing to the supply of activated titanium an
d nitrogen to the substrate surface. In addition, a scaling correlatio
n has been established between the concentration of these species in t
he bulk plasma and the film growth rate which supports this result.