SUBLIMATION GROWTH OF 4H-SIC AND 6H-SIC BOULE CRYSTALS

Authors
HEYDEMANN VD SCHULZE N BARRETT DL PENSL G
Citation
Vd. Heydemann et al., SUBLIMATION GROWTH OF 4H-SIC AND 6H-SIC BOULE CRYSTALS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1262-1265
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1262 - 1265
Database
ISI
SICI code
0925-9635(1997)6:10<1262:SGO4A6>2.0.ZU;2-4
Abstract
The dual-seed-crystal method is developed and used to study the growth of 4H- and 6H-SiC boule crystals by varying particular growth paramet ers, e.g. the distance between the growth front and the source materia l and the face polarity of the seeds. A range of values is elaborated for a series of growth parameters, which leads to the growth of single crystals. The grown SiC crystals are electrically and optically chara cterized, (C) 1997 Elsevier Science S,A.