GROWTH OF SIC FROM THE LIQUID-PHASE - WETTING AND DISSOLUTION OF SIC

Authors
SYVAJARVI M YAKIMOVA R JANZEN E
Citation
M. Syvajarvi et al., GROWTH OF SIC FROM THE LIQUID-PHASE - WETTING AND DISSOLUTION OF SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1266-1268
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1266 - 1268
Database
ISI
SICI code
0925-9635(1997)6:10<1266:GOSFTL>2.0.ZU;2-Z
Abstract
The wetting properties of various Si-Se melts on different faces of al pha-SiC wafers are studied and the dissolution morphologies investigat ed. The properties for on-axis wafers are found to be dependent on all oy composition and on polytype. The wetting properties of misoriented wafers are also investigated. From the results obtained, the interfaci al energies on different faces are found to be dissimilar, and the sur face free energy of 4H-SiC is compared with 6H-SiC. Owing to this, the growth mechanism is discussed. (C) 1997 Elsevier Science S.A.