GROWTH-RELATED STRUCTURAL DEFECTS IN SEEDED SUBLIMATION-GROWN SIC

Authors
TUOMINEN M YAKIMOVA R PRIEUR E ELLISON A TUOMI T VEHANEN A JANZEN E
Citation
M. Tuominen et al., GROWTH-RELATED STRUCTURAL DEFECTS IN SEEDED SUBLIMATION-GROWN SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1272-1275
Citations number
7
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1272 - 1275
Database
ISI
SICI code
0925-9635(1997)6:10<1272:GSDISS>2.0.ZU;2-A
Abstract
Structural defects in 4H and 6H SiC wafers have been studied by means of synchrotron X-ray topography and optical microscopy. The effect of seed crystal attachment, orientation, growth face shape, reloading and continued growth are discussed. A comparison between 4H and 6H materi al is made also. The results relate the origin oi. different defects t o the mentioned growth conditions. (C) 1997 Elsevier Science S,A.