HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS

Authors
HENRY A IVANOV IG EGILSSON T HALLIN C ELLISON A KORDINA O LINDEFELT U JANZEN E
Citation
A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Citations number
12
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1289 - 1292
Database
ISI
SICI code
0925-9635(1997)6:10<1289:H4GOVS>2.0.ZU;2-A
Abstract
Growth of 4H epilayers has been achieved by chemical vapour deposition on various substrate orientations which were on-(0001) oriented, off axis (3.5 degrees- and 8 degrees-off towards the (11 (2) over bar 0) d irection) and a-cut, both (11 (2) over bar 0) and (10 (1) over bar 0)- oriented material. Various characterisation techniques have been used to assess the epilayer quality such as optical microscopy, X-ray diffr action, and mainly photoluminescence spectroscopy. (C) 1997 Elsevier S cience S.A.