SIC AND GROUP-III NITRIDE GROWTH IN MOVPE PRODUCTION REACTORS

In this study a range of MOVPE systems for high temperature epitaxial growth processes, such as SiC and group III nitrides, is presented. It is shown that extensive modelling of the heat transfer, gas flow and reactant depletion has led to highly efficient reactors that provide t he capability for uniform growth of binary and ternary material system s at temperatures up to 1600 degrees C in single-and multi wafer confi gurations. Experimental results of various layers are presented to pro ve the availability of state-of-the-art process technology in producti on-scale systems. (C) 1997 Elsevier Science S.A.