HYDROGEN-RELATED, BORON-RELATED, AND HYDROGEN-BORON-RELATED LOW-TEMPERATURE PHOTOLUMINESCENCE OF 6H-SIC

An investigation of the low temperature (T < 2 K) photoluminescence (L TPL) of boron-, hydrogen-, and boron together with hydrogen-doped SIC was done. We used n-type samples of the polytype 6H. After the implant ation of boron and annealing at 1700 degrees C, we detected three new LTPL emission lines close to a wavelength of 4205 Angstrom. After the implantation of hydrogen into the boron-implanted samples, we detected another single line at 4183 Angstrom, while the lines at 4205 Angstro m disappeared. In samples with a higher dose of boron, phonon replica of the 4183 Angstrom emission line were detected and two vibrational m odes affiliated to the defect were identified (86 and 118 meV). The in vestigation or boron-doped CVD layers revealed intense hydrogen correl ated LTPL emission. (C) 1997 Elsevier Science S.A.