RADIATION-INDUCED DEFECT CENTERS IN 4H SILICON-CARBIDE

Deep level transient spectroscopy (DLTS) and low temperature photolumi nescence (LTPL) were applied to investigate radiation-induced defect c enters and their thermal stability in 4H silicon carbide (SiC) epilaye rs grown by chemical vapor deposition (CVD). The epilayers were implan ted with He+ ions and annealed at different temperatures. Several deep defect levels were monitored with DLTS in the 4H polytype. The correl ation of these centers with photoluminescence lines is discussed with respect to appropriate annealing steps. (C) 1997 Elsevier Science S.A.