C. Wagner et G. Krotz, THERMAL-PROPERTIES OF BETA-SIC EPITAXIAL LAYERS BETWEEN 150-DEGREES-CAND 500-DEGREES-C MEASURED BY USING MICROSTRUCTURES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1338-1341
The heat conductivity and the thermal diffusion velocity of LPCVD grow
n, nominally undoped epitaxial SiC layers on silicon were determined f
rom 150 degrees C to 500 degrees C. ia novel arrangement of micromachi
ned SiC bridges was used to measure these quantities with little calcu
lation effort. The thermal conductivity was derived from the temperatu
re difference and the heat flow over a SiC micro bridge. The heat diff
usion velocity was obtained from the phase shift between the temperatu
re modulation induced at one side of the SiC micro bridge and detected
at the other, respectively. The temperature distribution of the SiC m
icrostructure was measured by a thermal imaging system. (C) 1997 Elsev
ier Science S.A.