THERMAL-PROPERTIES OF BETA-SIC EPITAXIAL LAYERS BETWEEN 150-DEGREES-CAND 500-DEGREES-C MEASURED BY USING MICROSTRUCTURES

The heat conductivity and the thermal diffusion velocity of LPCVD grow n, nominally undoped epitaxial SiC layers on silicon were determined f rom 150 degrees C to 500 degrees C. ia novel arrangement of micromachi ned SiC bridges was used to measure these quantities with little calcu lation effort. The thermal conductivity was derived from the temperatu re difference and the heat flow over a SiC micro bridge. The heat diff usion velocity was obtained from the phase shift between the temperatu re modulation induced at one side of the SiC micro bridge and detected at the other, respectively. The temperature distribution of the SiC m icrostructure was measured by a thermal imaging system. (C) 1997 Elsev ier Science S.A.