INVESTIGATION OF MODIFIED 3C SIC(100) SURFACES BY SURFACE-SENSITIVE TECHNIQUES

We studied 3C-SiC(100) surfaces with various reconstructions by high-r esolution electron energy-loss spectroscopy (HREELS), Auger electron s pectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and low-ener gy electron diffraction (LEED). After annealing at 1325 K oxygen desor bs and a Si-terminated (2 x 1) surface is obtained. Subsequent anneali ng at higher temperatures leads to the sublimation of Si, which result s in a carbon-rich c(2 x 2) surface. We exposed (2 x 1) and c(2 x 2) s urfaces to atomic hydrogen, and were able to observe the H-Si-H stretc hing vibration on silicon carbide. (C) 1997 Elsevier Science S.A.