WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS

Authors
ELLISON A RADAMSON H TUOMINEN M MILITA S HALLIN C HENRY A KORDINA O TUOMI T YAKIMOVA R MADAR R JANZEN E
Citation
A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1369 - 1373
Database
ISI
SICI code
0925-9635(1997)6:10<1369:WWCBAI>2.0.ZU;2-A
Abstract
The relationship between the warpage of 4H-SiC CVD grown epi-wafers wi th crystal bending and substrate properties is investigated. The wafer surface preparation before and after epitaxy is found to affect both long range properties such as the wafer flatness and to some extent lo cal properties such as the epi-substrate interface. Structural charact erisation is carried out using X-ray diffraction techniques and KOH et ching. (C) 1997 Elsevier Science S.A.