DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC

Authors
SON NT SORMAN E SINGH M CHEN WM HALLIN C KORDINA O MONEMAR B LINDSTROM JL JANZEN E
Citation
Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380
Citations number
7
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1378 - 1380
Database
ISI
SICI code
0925-9635(1997)6:10<1378:DLCIE6>2.0.ZU;2-Y
Abstract
We report on OUT observation of several new photoluminescence (PL) spe ctra in electron-irradiated 6H SiC. In addition to the vacancy-related PL spectrum ranging from 1.36 to 1.44 eV, four other spectra with no- phonon lines in the regions of 0.9983-1.0738 eV, 1.0878-1.1342 eV and 1.3563-1.3711 eV were detected in 6H SiC. These luminescent centres ar e rather thermally stable. From the formation and annealing behaviour, these centres were suggested to be complexes, of which some involve a silicon vacancy. (C) 1997 Elsevier Science S.A.