OPTICAL INVESTIGATION OF THICK 3C-SIC LAYERS DEPOSITED ON BULK SILICON BY CVD

Authors
BLUET JM CAMASSEL J FALKOVSKY LA LEYCURAS A
Citation
Jm. Bluet et al., OPTICAL INVESTIGATION OF THICK 3C-SIC LAYERS DEPOSITED ON BULK SILICON BY CVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1385-1387
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1385 - 1387
Database
ISI
SICI code
0925-9635(1997)6:10<1385:OIOT3L>2.0.ZU;2-R
Abstract
Thick (up to 25 mu m) SiC layers deposited on silicon have been probed by micro-Raman spectroscopy and infrared reflectivity measurement. Th e Raman spectra collected on the edge of the sample show a large strai n relaxation when moving from the interface region to the free surface of the sample. The IR reflectivity measurements evidence a finite rou ghness of the Si/SiC interface and about 10% dispersion in the layer t hickness homogeneity. (C) 1997 Elsevier Science S.A.