FABRICATION OF HIGH-QUALITY OXIDES ON SIC BY REMOTE PECVD

Authors
GOLZ A GROSS S JANSSEN R VONKAMIENSKI ES KURZ H
Citation
A. Golz et al., FABRICATION OF HIGH-QUALITY OXIDES ON SIC BY REMOTE PECVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1420-1423
Citations number
9
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1420 - 1423
Database
ISI
SICI code
0925-9635(1997)6:10<1420:FOHOOS>2.0.ZU;2-K
Abstract
The interface trap density in oxides grown on 6H silicon carbide by re mote plasma-enhanced chemical vapor deposition as well as by thermal o xidation is studied. This trap density is found to be drastically redu ced by a plasma-assisted PDP (pre-deposition process) in hydrogen. The reduction is stable if a high-temperature annealing step is carried o ut which excludes a simple passivation by hydrogen. (C) 1997 Elsevier Science S.A.