TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC

The structure of Ni and Si/Ni contacts to SiC was studied by transmiss ion electron microscopy. Annealed Ni/SiC contacts showed ohmic behavio ur, but Ni proved to be reactive with SiC resulting in the formation o f nickel silicide together with the formation of a high number of void s. Deposition and annealing of Si/Ni multilayer contacts resulted in a void free Ni2Si contact layer on SiC, while also exhibiting low conta ct resistivity. (C) 1997 Elsevier Science S.A.