PREFERENTIAL ETCHING OF SIC CRYSTALS

Authors
YAKIMOVA R HYLEN AL TUOMINEN M SYVAJARVI M JANZEN E
Citation
R. Yakimova et al., PREFERENTIAL ETCHING OF SIC CRYSTALS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1456-1458
Citations number
5
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1456 - 1458
Database
ISI
SICI code
0925-9635(1997)6:10<1456:PEOSC>2.0.ZU;2-0
Abstract
Preferential etching of 6H and 4H SiC in molten KOH is studied at diff erent temperatures as to the etching rate and defect appearance. The e ffect of etching time on micropipe related etch-pit size is revealed. Optimal etching conditions are suggested in order to gain information on defect type and distribution. (C) 1997 Elsevier Science S.A.