SCHOTTKY CONTACT INVESTIGATION ON REACTIVE ION ETCHED 6H ALPHA-SIC

Authors
CONSTANTINIDIS G KUZMIK J MICHELAKIS K
Citation
G. Constantinidis et al., SCHOTTKY CONTACT INVESTIGATION ON REACTIVE ION ETCHED 6H ALPHA-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1459-1462
Citations number
8
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1459 - 1462
Database
ISI
SICI code
0925-9635(1997)6:10<1459:SCIORI>2.0.ZU;2-E
Abstract
Reactive Ion Etching (RIE) was performed on monocrystalline 6H alpha-S iC samples with CF4/H-2-based gas mixtures. Schottky contacts on RIE e tched alpha-SiC were compared with reference Schottky contacts on non- etched alpha-SiC. (C) 1997 Elsevier Science S.A.