LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such as barrier height and doping level. The 1/f noise closely follows a model propose d in Ref. [3] [T.G.M. Kleinpenning, Solid State Electron. 22 (1979) 12 1-128] and is thus most probably due to mobility fluctuations in the d epletion region of the Schottky barrier. (C) 1997 Elsevier Science S.A .