PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC

Authors
VONKAMIENSKI EGS LEONHARD C SCHARNHOLZ S GOLZ A KURZ H
Citation
Egs. Vonkamienski et al., PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1497-1499
Citations number
10
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
10
Year of publication
1997
Pages
1497 - 1499
Database
ISI
SICI code
0925-9635(1997)6:10<1497:POITIM>2.0.ZU;2-R
Abstract
Interface traps in the SiO2-6H-SiC system can be passivated by a high temperature anneal in hydrogen or moistrous atmosphere. The passivatio n is very effective for deep donor like traps which are reduced toward s the 10(11) cm(-2) eV(-1) range. The electrical properties of n-chann el MOSFETs show that the gate oxides contain only a low density of fix ed oxide charges in the low 10(11) cm(-2) range for the passivated and the unpassivated state. It is further demonstrated that deep donor-li ke interface states hardly affect the electrical properties of n-chann el MOSFETs on 6H-SiC. (C) 1997 Elsevier Science S.A.