STRUCTURAL AND ELECTRICAL-PROPERTIES OF SCHOTTKY BARRIERS ON N-GAN

Cr, Au and Ni Schottky barriers were formed on n-GaN. Fundamental para meters of the barriers (barrier height, electron affinity of GaN, and effective Richardson coefficient) were calculated from results of curr ent-voltage and capacitance-voltage measurements. Interface chemistry of Cr, Au and Ni barriers on n-GaN was studied using Auger electron sp ectroscopy (AES) and angle-resolved X-ray photoelectron spectroscopy ( AR XPS). A correlation between the chemical reactivity of metals and t he value of the effective Richardson coefficient was established. (C) 1997 Elsevier Science S.A.