MONTE-CARLO MODELING OF TRANSIENT EFFECTS IN RESONANT-TUNNELING BIPOLAR-TRANSISTORS

Authors
Citation
M. Ryzhii, MONTE-CARLO MODELING OF TRANSIENT EFFECTS IN RESONANT-TUNNELING BIPOLAR-TRANSISTORS, JPN J A P 1, 36(8), 1997, pp. 5060-5062
Citations number
9
Categorie Soggetti
Physics, Applied
Volume
36
Issue
8
Year of publication
1997
Pages
5060 - 5062
Database
ISI
SICI code
Abstract
Transient behavior of bipolar transistors with a quantum-well base and a resonant-tunneling structure in the collector is studied using the ensemble Monte Carlo particle method. The switch on/off processes as a response to trigger pulses of the collector voltage and the base curr ent are simulated. The amplitudes and duration of the pulses providing reliable switching are obtained.