CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENT FOR LOCAL STRAIN DISTRIBUTION IN SI AROUND A NISI2 ISLAND

Lattice strain distribution was measured in Si substrates near NiSi2 i slands. Using the convergent beam electron diffraction (CBED) techniqu e, quantitative and highly spatially resolved evaluations were carried out. Variations in the CBED patterns were found to be due to a combin ation of stress components with different orientations and magnitude. As a result, it was revealed that; in addition to normal stress compon ents, singular stress with characteristic orientation or extremely hig h strain concentration was observed, especially near the NiSi2 island corner. This actual strain distribution was considered to be highly in fluenced by the shape, size and orientation of the NiSi2 island on Si substrates.