HIGH PEAK-TO-VALLEY CURRENT RATIO GAINAS GAINP RESONANT-TUNNELING DIODES/

Authors
OOBO T TAKEMURA R SUHARA M MIYAMOTO Y FURUYA K
Citation
T. Oobo et al., HIGH PEAK-TO-VALLEY CURRENT RATIO GAINAS GAINP RESONANT-TUNNELING DIODES/, JPN J A P 1, 36(8), 1997, pp. 5079-5080
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
8
Year of publication
1997
Pages
5079 - 5080
Database
ISI
SICI code
Abstract
As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity. We,report the fabrication of GaIn As/GaInP resonant tunneling diodes which exhibit current density-volta ge characteristics with a peak-to-valley current ratio of 7.8 at 4.2K. To our knowledge, this is the highest value obtained for this materia l system.