STRUCTURE AND PHOTOELECTRIC PROPERTIES OF COPPER-PHTHALOCYANINE LEAD-TELLURIDE MULTILAYER THIN-FILM PREPARED BY LASER-ABLATION AND THERMAL EVAPORATION

We prepared highly crystallized copper-phthalocyanine (CuPc)/lead tell uride (PbTe) hetero-multilayer structures for the first time. The crys tallized CuPc (alpha-form) and PbTe films are formed by thermal evapor ation and laser ablation techniques, respectively. Both films are grow n at 300 degrees C, which is a lower growth temperature than that of o ther transition metal chalcogenide films. We observed the transverse c urrent-voltage characteristics of CuPc/Si, PbTe/Si and PbTe/CuPc/Si ju nctions in the dark and under illumination. The PbTe/CuPc/Si junction exhibits a strong photovoltaic response with quantum efficiency of 15. 4% and a power conversion efficiency of 3.46x10(-2). The photocarrier is generated in the CuPc layer and the carriers are separated by the s teep incline of the potential near the CuPc/PbTe interface. The CuPc/P bTe multilayers exhibit a high level of photoconductivity in the in-pl ane direction.