PREPARATION OF EPITAXIAL PB(ZR,TI)O-3 THIN-FILMS ON NB-DOPED SRTIO3(100) SUBSTRATES BY DIPPING-PYROLYSIS PROCESS

Citation
Ks. Hwang et al., PREPARATION OF EPITAXIAL PB(ZR,TI)O-3 THIN-FILMS ON NB-DOPED SRTIO3(100) SUBSTRATES BY DIPPING-PYROLYSIS PROCESS, JPN J A P 1, 36(8), 1997, pp. 5221-5225
Citations number
16
Categorie Soggetti
Physics, Applied
Volume
36
Issue
8
Year of publication
1997
Pages
5221 - 5225
Database
ISI
SICI code
Abstract
Epitaxially grown Pb(Zr, Ti)O-3 (PZT, Pb: Zr: Ti = 1 : 0.52 : 0.48) th in films were prepared on Nb-doped SrTiO3 (100) substrates by dipping- pyrolysis process with metal naphthenates used as starting materials. The alignments of the films were investigated based on X-ray diffracti on (XRD) theta-2 theta scans, beta scans (pole figures); and asymmetri c omega-2 theta scans (reciprocal-space maps). Epitaxial films with sm ooth surfaces were obtained by heat treatment of prefired films at 600 degrees-750 degrees C; a film heat-treated at 750 degrees C showed th e strongest peak intensities in the XRD theta-2 theta scans. These PZT films were found by reciprocal-space map analysis to consist of the c -axis-oriented tetragonal phase.