EFFECTS OF THE PARTIAL-PRESSURE OF COPPER(I) HEXAFLUOROACETYLACETONATE TRIMETHYLVINYLSILANE ON THE CHEMICAL-VAPOR-DEPOSITION OF COPPER

The effects of the partial pressure of precursor on the metalorganic c hemical vapor deposition of copper were investigated. Copper was depos ited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane a s a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure w arm-wall chemical vapor deposition reactor. The deposition rate of cop per film was a constant Value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure l ower than 0.048 Torr. The incubation time for copper nucleation decrea sed with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 mu Omega.cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr , copper did not nucleate inside the trench so that the step coverage of copper him became very poor.