POSITIVE-NEGATIVE INVERSION OF SILICON-BASED RESIST MATERIALS - POLY(DI-N-HEXYLSILANE) FOR ION-BEAM IRRADIATION

The present paper describes radiation induced solubility changes and e mission spectra of poly(di-n-hexylsilane) and their temperature depend ence on. Poly(di-n-hexylsilane) has a clear phase transition temperatu re at around 312 K with change of the silicon skeleton structure. Radi ation induced reactions differed greatly above and below this temperat ure, showing large emission spectral changes. High LET (linear energy transfer; energy deposition rate of incident particles per 100 Angstro m ion beams induced main chain crosslinking in the polymer. PDHS behav ed as a negative-type resist material below 312 K, although it had bee n previously confirmed that PDHS had shown positive-type resist proper ties for UV light, electron beams, X-rays, low LET proton beams at any temperature range and for higher LET He ion beams at a temperature ab ove 312 K.