ENERGY-DEPENDENCE OF DAMAGE TO SI PIN DIODES EXPOSED TO BETA-RADIATION

Authors
LAUBER JA GASCONSHOTKIN S KELLOGG RG MARTINEZ GR
Citation
Ja. Lauber et al., ENERGY-DEPENDENCE OF DAMAGE TO SI PIN DIODES EXPOSED TO BETA-RADIATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 396(1-2), 1997, pp. 165-171
Citations number
6
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
396
Issue
1-2
Year of publication
1997
Pages
165 - 171
Database
ISI
SICI code
0168-9002(1997)396:1-2<165:EODTSP>2.0.ZU;2-0
Abstract
The radiation damage to Si PIN diodes such as used in the OPAL SiW lum inometer was studied. It was found that the increase in leakage curren t after exposure to bursts of 500 MeV electrons is >0.2 x 10(3) times higher than after the exposure of an equivalent dose of electrons emit ted from a Strontium beta source. Highly-energetic electrons produce a similar amount of damage to silicon as do protons or neutrons.