EFFECT OF GROWTH TEMPERATURE ON THE BAND LINEUP OF GE CDTE(111) POLARINTERFACES/

Authors
BAN DY FANG RC XUE JG LU ED XU PS
Citation
Dy. Ban et al., EFFECT OF GROWTH TEMPERATURE ON THE BAND LINEUP OF GE CDTE(111) POLARINTERFACES/, Chinese Physics Letters, 14(8), 1997, pp. 609-612
Citations number
13
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
14
Issue
8
Year of publication
1997
Pages
609 - 612
Database
ISI
SICI code
0256-307X(1997)14:8<609:EOGTOT>2.0.ZU;2-T
Abstract
By using synchrotron radiation photoelectron spectroscopy, the band li neup of Ge/CdTe (111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe (111) interface grown at room temperature is 0.88+/-0.1 eV, which agrees well with previously reported value. While as for the in terface grown at 280 degrees C, an obvious reduction of valence band o ffsets is observed and attributed to the effect of different interface dipole.