By using synchrotron radiation photoelectron spectroscopy, the band li
neup of Ge/CdTe (111) interfaces grown at different temperatures have
been measured. Experimental studies show that the valence band offset
of Ge/CdTe (111) interface grown at room temperature is 0.88+/-0.1 eV,
which agrees well with previously reported value. While as for the in
terface grown at 280 degrees C, an obvious reduction of valence band o
ffsets is observed and attributed to the effect of different interface
dipole.