INFLUENCE OF GAS MEDIUM ON THE SENSITIVITY OF AN IONIZATION TYPE SEMICONDUCTOR PHOTOGRAPHIC SYSTEM

The results of measurements of tile characteristics of the ionization- type semiconductor photographic system with a gas discharge gap on bot h sides of a semiconducting GaAs:Cr plate are presented. Characteristi cs were measured under fixed pressure in the interval 600-60 Torr. As a result of this investigation one can see that it is possible to choo se optimum renditions for a photographic ionization system filled by i nert gases. Using this gas medium solves the problem of retaining semi conductor surface and change of the glow spectrum of gas. Means of inc reasing the sensitivity and improving the working characteristics are proposed.