ACCOUNT OF PHOTOELECTRON ELASTIC DETERMINATION OF OVERLAYER THICKNESS, IN-DEPTH PROFILING, ESCAPE DEPTH, ATTENUATION COEFFICIENTS AND INTENSITIES IN SURFACE SYSTEMS

Citation
Vi. Nefedov et Is. Fedorova, ACCOUNT OF PHOTOELECTRON ELASTIC DETERMINATION OF OVERLAYER THICKNESS, IN-DEPTH PROFILING, ESCAPE DEPTH, ATTENUATION COEFFICIENTS AND INTENSITIES IN SURFACE SYSTEMS, Journal of electron spectroscopy and related phenomena, 85(3), 1997, pp. 221-248
Citations number
49
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
85
Issue
3
Year of publication
1997
Pages
221 - 248
Database
ISI
SICI code
0368-2048(1997)85:3<221:AOPEDO>2.0.ZU;2-0
Abstract
An analytical connection is found between parameters of Monte Carlo an d transport theory methods to account for elastic electron scattering in solids. A simple analytical method is proposed for the intensity ca lculations in X-ray photoelectron spectroscopy (XPS) and Auger electro n spectroscopy (AES) with account of elastic scattering. The method is applied for solution of many problems in XPS including determination of the overlayer thickness, correction factors for the in-depth profil ing, escape depth, attenuation lengths, intensities in layered systems . (C) 1997 Elsevier Science B.V.