ACCOUNT OF PHOTOELECTRON ELASTIC DETERMINATION OF OVERLAYER THICKNESS, IN-DEPTH PROFILING, ESCAPE DEPTH, ATTENUATION COEFFICIENTS AND INTENSITIES IN SURFACE SYSTEMS
Vi. Nefedov et Is. Fedorova, ACCOUNT OF PHOTOELECTRON ELASTIC DETERMINATION OF OVERLAYER THICKNESS, IN-DEPTH PROFILING, ESCAPE DEPTH, ATTENUATION COEFFICIENTS AND INTENSITIES IN SURFACE SYSTEMS, Journal of electron spectroscopy and related phenomena, 85(3), 1997, pp. 221-248
An analytical connection is found between parameters of Monte Carlo an
d transport theory methods to account for elastic electron scattering
in solids. A simple analytical method is proposed for the intensity ca
lculations in X-ray photoelectron spectroscopy (XPS) and Auger electro
n spectroscopy (AES) with account of elastic scattering. The method is
applied for solution of many problems in XPS including determination
of the overlayer thickness, correction factors for the in-depth profil
ing, escape depth, attenuation lengths, intensities in layered systems
. (C) 1997 Elsevier Science B.V.