Iron oxide and cobalt oxide thin films were prepared by reactive DC ma
gnetron sputtering in a mixture of Ar and O-2 gases. The stoichiometry
of the oxide films was studied as a function of the amount of O-2 dur
ing deposition, Sputtering conditions, including de power and oxygen-t
o-argon ratio, were found which allowed pure FeO, Fe3O4, alpha-Fe2O3,
CoO, and CO3O4 films to be fabricated. The microstructure of the films
, and especially the grain shape and size distribution, were quite dif
ferent for oxide films with different stoichiometry, The crystallograp
hic axes of Fe-O films were randomly oriented in contrast to Co-O film
s in which a strong [111] texture was found, A strong ferromagnetic li
ke behavior was observed in FeO and alpha-Fe2O3 films, in contrast to
the well-established antiferromagnetic behavior in bulk, The reason fo
r this anomalous behavior is attributed to clusters of defects in FeO
films and uncompensated surface spins in alpha-Fe2O3 films, A large sh
ift (3800 Oe) was observed in the low temperature hysteresis loop of a
field cooled sample consisting of 50% Co and 50% CoO. A similar but l
ess pronounced effect was observed in FeO and alpha-Fe2O3 films. This
result is believed to be caused by a strong exchange coupling between
the ferromagnetic and antiferromagnetic constituents in these composit
e films.