XTEM STUDIES OF NICKEL SILICIDE GROWTH ON SI(100) USING A NI TI BILAYER SYSTEM/

Authors
FALKE U FENSKE F SCHULZE S HIETSCHOLD M
Citation
U. Falke et al., XTEM STUDIES OF NICKEL SILICIDE GROWTH ON SI(100) USING A NI TI BILAYER SYSTEM/, Physica status solidi. a, Applied research, 162(2), 1997, pp. 615-621
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
162
Issue
2
Year of publication
1997
Pages
615 - 621
Database
ISI
SICI code
0031-8965(1997)162:2<615:XSONSG>2.0.ZU;2-2
Abstract
Using a Ni/Ti bilayer system on Si(100) substrates we found a preferen tial growth of epitaxial NiSi2 at reaction temperatures of about 475 d egrees C. This is attributed to the relatively slow Ni transport rate through the Ti layer, which acts as a diffusion rate limiting barrier. Annealing temperatures of 500 degrees C lead to the formation of main ly orthorhombic NiSi with a small fraction of NiSi2. The silicide phas es grow with well defined orientations with respect to the underlying Si lattice for annealing temperatures up to 475 degrees C.