U. Falke et al., XTEM STUDIES OF NICKEL SILICIDE GROWTH ON SI(100) USING A NI TI BILAYER SYSTEM/, Physica status solidi. a, Applied research, 162(2), 1997, pp. 615-621
Using a Ni/Ti bilayer system on Si(100) substrates we found a preferen
tial growth of epitaxial NiSi2 at reaction temperatures of about 475 d
egrees C. This is attributed to the relatively slow Ni transport rate
through the Ti layer, which acts as a diffusion rate limiting barrier.
Annealing temperatures of 500 degrees C lead to the formation of main
ly orthorhombic NiSi with a small fraction of NiSi2. The silicide phas
es grow with well defined orientations with respect to the underlying
Si lattice for annealing temperatures up to 475 degrees C.