TRANSIENT PHOTOINDUCED VOLTAGE IN HETERO-STRUCTURED POLYIMIDE LANGMUIR-BLODGETT-FILMS

Authors
Citation
M. Iwamoto et Xb. Xu, TRANSIENT PHOTOINDUCED VOLTAGE IN HETERO-STRUCTURED POLYIMIDE LANGMUIR-BLODGETT-FILMS, Thin solid films, 285, 1996, pp. 936-938
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
285
Year of publication
1996
Pages
936 - 938
Database
ISI
SICI code
0040-6090(1996)285:<936:TPVIHP>2.0.ZU;2-W
Abstract
We developed a transient photoinduced voltage measuring system and the n investigated the photoinduced electron transfer in heterostructured polyimide Langmuir-Blodgett films consisting of a polyimide of one typ e (PI) and a polyimide of another type containing a tetraphenylporphyr in moiety (PORPI). The photoinduced transient voltage depended on the PORPI layers (n), indicating that there are two kinds of electron tran sfer mechanism. For n exceeding 3, the maximum value of the induced tr ansient voltage increases with n. We conclude that photoexcited electr ons were transported in PORPI films at a distance of 2-4 nm.