RECORDING STUDIES OF SUBMICRON WRITE HEADS BY FOCUSED ION-BEAM TRIMMING

In this paper we discuss the performances of our current inductive wri te heads which have been processed using conventional lithography, the n trimmed at the ABS using focused ion beam to submicron dimensions fo r very narrow track applications. We demonstrate that for pole-tips of submicron geometries, we are able to achieve adequate write performan ces. For a 10 turn FIB trimmed head of 0.85 micron final pole width, w e achieve an erase width of 0.9 microns, 55% rolloff density at 5500 f c/mm, write threshold of 30 mA, and hard transition shift of 5 nm at w rite currents of 70 mA.