SMALL TRACK WIDTH MR SENSORS STABILIZED WITH NIMN

Small track width magnetoresistive sensors, stabilized with NiMn excha nge tabs were fabricated. Two configurations were investigated: one wi th the NiMn on top and the other with the NiMn at the bottom. Both typ es of structures were found to be effectively stabilized by the antife rromagnetic NiMn. In order to obtain the desired properties of the NiM n/NiFe exchange couple, a long, high temperature anneal needs to be do ne. With the second configuration (NiMn at the bottom), the anneal is done before the deposition of the NiFe sensor. This configuration coul d be extended to spin-valves which are temperature sensitive, and sinc e the anneal is done before the deposition of the NiFe, the sensor mat erial is not subject to the high temperature anneal. The two Configura tions require different fabrication steps which are described in this paper. The stabilizing properties of NiMn are also compared with NiO.