MICROMAGNETIC SIMULATIONS OF MAGNETORESISTIVE BEHAVIOR OF SUBMICROMETER SPIN-VALVE MRAM DEVICES

Authors
OTI JO RUSSEK SE
Citation
Jo. Oti et Se. Russek, MICROMAGNETIC SIMULATIONS OF MAGNETORESISTIVE BEHAVIOR OF SUBMICROMETER SPIN-VALVE MRAM DEVICES, IEEE transactions on magnetics, 33(5), 1997, pp. 3298-3300
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
1
Pages
3298 - 3300
Database
ISI
SICI code
0018-9464(1997)33:5<3298:MSOMBO>2.0.ZU;2-M
Abstract
The effects of device shape and size on the giant magnetoresistive (MR ) response of NiFe7.5nm/Co-0.6nm/Cu-3nm/Co-0.6nm/NiFe7.5nm/FeMn spin-v alve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation, Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 mu m to 1.5 mu m are simu lated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied.