EFFECT OF CRYSTALLINE ANISOTROPY IN AMRAM CELLS

Authors
GADBOIS J ZHU JG VAVRA W HURST A
Citation
J. Gadbois et al., EFFECT OF CRYSTALLINE ANISOTROPY IN AMRAM CELLS, IEEE transactions on magnetics, 33(5), 1997, pp. 3301-3303
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
1
Pages
3301 - 3303
Database
ISI
SICI code
0018-9464(1997)33:5<3301:EOCAIA>2.0.ZU;2-A
Abstract
The effect of crystalline anisotropy on the device signal and edge swi tching thresholds of both NiFeCo and NiFe anisotropic magnetoresistive random access memory (AMRAM) cells has been simulated. The NiFe devic e demonstrated a greater signal range with an edge switching threshold of 50e, while the NiFeCo device showed a smaller range of signal but with an edge switching threshold of 13Oe.